• DocumentCode
    2391090
  • Title

    V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications

  • Author

    Nishikawa, K. ; Piernas, B. ; Nakagawa, T. ; Araki, K. ; Cho, K.

  • Author_Institution
    NTT Network Innovation Labs., NTT Corp., Yokosuka, Japan
  • fYear
    2003
  • fDate
    9-12 Nov. 2003
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    This paper demonstrates fully-integrated V-band single-chip transmitter and receiver 3D MMICs for high-speed wireless applications. These 3D MMICs provide full RF functions, including an oscillator, even though they are very compact. The transmitter MMIC realizes more than 10 dBm output power at 57-60 GHz, while the receiver MMIC achieves 33 dB conversion gain and less than 6 dB noise figure at the same frequency range. The chip sizes of the transmitter and the receiver are 2.89 mm/sup 2/ and 5.04 mm/sup 2/, respectively. The V-band fully-integrated MMICs promise much cheaper millimeter-wave RF equipment due to their high-integration level, compactness, and few interconnections for other components.
  • Keywords
    HEMT integrated circuits; field effect MIMIC; millimetre wave receivers; radio transmitters; 33 dB; 57 to 60 GHz; 6 dB; GaAs; RX single-chip 3D MMIC; V-band fully-integrated TX MMIC; high-speed wireless applications; millimeter-wave RF equipment; oscillator; pHEMT technology; single chip receiver; single chip transmitter; Frequency conversion; Gain; Gallium arsenide; MMICs; Noise figure; Oscillators; PHEMTs; Power generation; Radio frequency; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-7833-4
  • Type

    conf

  • DOI
    10.1109/GAAS.2003.1252372
  • Filename
    1252372