Author :
Cohen, M. ; Roy, F. ; Herault, D. ; Cazaux, Y. ; Gandolfi, A. ; Reynard, JP ; Cowache, C. ; Bruno, E. ; Girault, T. ; Vaillant, J. ; Barbier, F. ; Sanchez, Y. ; Hotellier, N. ; LeBorgne, O. ; Augier, C. ; Inard, A. ; Jagueneau, T. ; Zinck, C. ; Michailos,
Abstract :
An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise, A full 3MP demonstrator with 1.75μ pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized
Keywords :
CMOS image sensors; copper; 1.45 micron; 1.75 micron; CMOS image sensors; Cu; cavity etch; dark current; pixel pitch; saturation charge; CMOS image sensors; CMOS process; Charge-coupled image sensors; Etching; Implants; Optical crosstalk; Optical filters; Photodiodes; Pixel; Sensor phenomena and characterization;
