Title :
Numerical analysis of compound semiconductor RF devices
Author :
Palankovski, V. ; Wagner, S. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Technische Univ. Wien, Austria
Abstract :
An overview of heterostructure RF device simulation for industrial applications based on III-V compound semiconductors has been given in (V. Palankovski et al., GaAs IC Symp. Tech. Dig., p.117-120, 2000). Here, we present the most recent achievements in numerical simulation for industrial heterostructure devices, together with relevant industrial applications (GaAs, InP and SiGe HBTs).
Keywords :
Ge-Si alloys; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor materials; semiconductor process modelling; technology CAD (electronics); GaAs; HBT; III-V compound semiconductors; InP; SiGe; TCAD tools; compound semiconductor RF devices; industrial heterostructure devices; semiconductor device numerical analysis; technology computer-aided design; Circuit simulation; Composite materials; Computational modeling; Doping; Gallium arsenide; Germanium silicon alloys; Numerical analysis; Radio frequency; Semiconductor device noise; Silicon germanium;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252374
