Title :
Determination of charge density and location of the charge centroid in electrets with semiconducting substrates
Author_Institution :
Tech. Univ. of Darmstadt, Germany
Abstract :
A novel method for determining the amount and the mean spatial depth of charges in electret-semiconductor systems is presented. It consists of two nondestructive measurements, from which the internal and external electric fields can be calculated independently. First, the surface potential at the electret-air interface is measured by an electrostatic voltmeter. Secondly, using a contacting front electrode, a metal insulator semiconductor structure is formed, on which capacitance or conductance voltage measurements are carried out. With these, one obtains the surface potential at the electret-semiconductor interface. The charge centroid and the charge density can now be calculated. Application of the method to 1-μm SiO2 electrets on silicon substrates showed that the charge centroid and the charge density could be varied with an annealing procedure before charging
Keywords :
annealing; capacitance; electrets; metal-insulator-semiconductor structures; annealing; capacitance; charge centroid; charge density; conductance voltage; contacting front electrode; electret-air interface; electret-semiconductor systems; electrostatic voltmeter; external electric fields; internal electric fields; metal insulator semiconductor structure; surface potential; Capacitance; Electrets; Electric variables measurement; Electrodes; Electrostatic measurements; Insulation; Metal-insulator structures; Surface charging; Voltage measurement; Voltmeters;
Conference_Titel :
Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
Conference_Location :
Berlin
Print_ISBN :
0-7803-0112-9
DOI :
10.1109/ISE.1991.167174