Author :
Moussy, N. ; Gidon, P. ; Carriére, N. ; Rabaud, W. ; Giffard, B. ; Glück, B. ; Thomas, D. ; Prima, J. ; Roy, F. ; Casanova, N. ; Regolini, J. ; Chevrier, J.B. ; Collet, F. ; Ozanne-Gomila, A.S. ; Salasca, O.
Abstract :
The authors report record performances for the reliability of amorphous silicon (a-Si:H) photosensor under high flux illumination. A fully functional VGA (3.0 mum pitch) image sensor, which can withstand 90 suns (= 9 Mlux) during 26 ks, was realized by the optimization of a-Si:H parameters, the pixel structure and the reading voltage
Keywords :
CMOS image sensors; amorphous semiconductors; elemental semiconductors; lighting; silicon; CMOS image sensor; Si; amorphous silicon photosensor; flux illumination; Amorphous silicon; CMOS image sensors; CMOS integrated circuits; Degradation; Filters; Image sensors; Indium tin oxide; Lighting; Photodiodes; Pixel;
