Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs

Author

Hsu, S.S.H. ; Pavlidis, D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

119

Lastpage

122

Abstract

The dispersion effects of transconductance (g/sub m/) and output resistance (R/sub ds/) in AlGaN/GaN MODFETs were investigated. The dispersion effects of g/sub m/ were found to be much smaller than those of R/sub ds/. Devices under different biases show g/sub m/ dispersion of /spl sim/ 4% to 7%, while R/sub ds/ dispersion of /spl sim/ 19 % to 44% in a frequency range of 50 Hz to 100 kHz. The trapping-detrapping time constants of the dispersion effects were extracted by employing a novel distributed RC network and carrier injection current sources. The time constants estimated are in a range of /spl sim/ 1.5 /spl mu/s to 1 ms.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; 1.5 mus to 1 ms; 50 Hz to 100 kHz; AlGaN-GaN; MODFET dispersion characteristics; carrier injection current sources; distributed RC network; output resistance; transconductance dispersion effects; trapping-detrapping time constants; Aluminum gallium nitride; Dispersion; Frequency; Gallium nitride; HEMTs; MODFET circuits; Power generation; Predictive models; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252377

Filename

1252377