Title :
Hole transport in plasma polymerized organosilicon films
Author :
Sielski, Jan ; Kryszewski, Marian
Author_Institution :
Polish Acad. of Sci., Lodz, Poland
Abstract :
Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization)
Keywords :
dielectric depolarisation; dielectric polarisation; dielectric thin films; electrets; electronic conduction in insulating thin films; polymer films; time of flight spectra; depolarization; drift mobility; electrets; electrical conductivity; hole transport; plasma polymerized organosilicon films; polarization process; time-of-flight method; Amorphous materials; Annealing; Circuits; Conductivity; Current measurement; Plasma measurements; Plasma temperature; Plasma transport processes; Polarization; Polymer films;
Conference_Titel :
Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
Conference_Location :
Berlin
Print_ISBN :
0-7803-0112-9
DOI :
10.1109/ISE.1991.167176
