DocumentCode :
2391230
Title :
High dynamic range, triple gate-based compact DC-40 GHz variable attenuator MMIC for Ka-band variable gain amplifier ICs
Author :
Lefebvre, B. ; Bessemoulin, A. ; Amara, H. ; Sevin, R. ; Quentin, P.
Author_Institution :
United Monolithic Semicond., Orsay, France
fYear :
2003
fDate :
9-12 Nov. 2003
Firstpage :
135
Lastpage :
138
Abstract :
The design and performance of a compact DC-40 GHz variable attenuator MMIC are reported in this paper. Using our standard 4-inch 0.25-/spl mu/m GaAs power PHEMT technology, this T-type attenuator exhibits more than 30-dB dynamic range, with a nominal insertion loss of 4 dB over the DC-40 GHz band By using triple-gate FETs, typical input power compression of more than 10 to 20 dBm is achieved with a die area of only 1 mm/sup 2/ (0.9/spl times/1.12 mm/sup 2/) and better overall performance. This MMIC is 30% smaller than any previously reported analog attenuators operating in the DC-40 GHz frequency range. This attenuator is used as well in a variable gain amplifier (VGA), specifically designed for Ka-band LMDS and VSAT radios. From 24 to 32 GHz, the VGA MMIC demonstrates a maximum gain of 32 dB, with more than 35-dB dynamic range and 24-dBm output power at 1-dB gain compression.
Keywords :
HEMT integrated circuits; III-V semiconductors; attenuators; automatic gain control; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; voltage control; 0 Hz to 40 GHz; 0.25 micron; 0.9 mm; 1.12 mm; 24 to 32 GHz; 32 dB; 4 dB; 4 inch; GaAs; Ka-band MMIC; LMDS radio; T-type attenuator; VGA; VSAT radio; analog attenuators; automatic gain control; high dynamic range attenuator; input power compression; power PHEMT technology; triple gate-based compact attenuator; triple-gate FET; variable attenuator; variable gain amplifier IC; voltage-controlled attenuators; Attenuators; Dynamic range; FETs; Frequency; Gain; Gallium arsenide; Insertion loss; MMICs; PHEMTs; Performance loss;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-7833-4
Type :
conf
DOI :
10.1109/GAAS.2003.1252380
Filename :
1252380
Link To Document :
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