• DocumentCode
    2391230
  • Title

    High dynamic range, triple gate-based compact DC-40 GHz variable attenuator MMIC for Ka-band variable gain amplifier ICs

  • Author

    Lefebvre, B. ; Bessemoulin, A. ; Amara, H. ; Sevin, R. ; Quentin, P.

  • Author_Institution
    United Monolithic Semicond., Orsay, France
  • fYear
    2003
  • fDate
    9-12 Nov. 2003
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    The design and performance of a compact DC-40 GHz variable attenuator MMIC are reported in this paper. Using our standard 4-inch 0.25-/spl mu/m GaAs power PHEMT technology, this T-type attenuator exhibits more than 30-dB dynamic range, with a nominal insertion loss of 4 dB over the DC-40 GHz band By using triple-gate FETs, typical input power compression of more than 10 to 20 dBm is achieved with a die area of only 1 mm/sup 2/ (0.9/spl times/1.12 mm/sup 2/) and better overall performance. This MMIC is 30% smaller than any previously reported analog attenuators operating in the DC-40 GHz frequency range. This attenuator is used as well in a variable gain amplifier (VGA), specifically designed for Ka-band LMDS and VSAT radios. From 24 to 32 GHz, the VGA MMIC demonstrates a maximum gain of 32 dB, with more than 35-dB dynamic range and 24-dBm output power at 1-dB gain compression.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; attenuators; automatic gain control; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; voltage control; 0 Hz to 40 GHz; 0.25 micron; 0.9 mm; 1.12 mm; 24 to 32 GHz; 32 dB; 4 dB; 4 inch; GaAs; Ka-band MMIC; LMDS radio; T-type attenuator; VGA; VSAT radio; analog attenuators; automatic gain control; high dynamic range attenuator; input power compression; power PHEMT technology; triple gate-based compact attenuator; triple-gate FET; variable attenuator; variable gain amplifier IC; voltage-controlled attenuators; Attenuators; Dynamic range; FETs; Frequency; Gain; Gallium arsenide; Insertion loss; MMICs; PHEMTs; Performance loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-7833-4
  • Type

    conf

  • DOI
    10.1109/GAAS.2003.1252380
  • Filename
    1252380