DocumentCode :
2391284
Title :
A precise model for leakage power estimation in VLSI circuits
Author :
Derakhshandeh, J. ; Masoumi, Nasser ; Aghnoot, S. ; Kasiri, B. ; Farazmand, Y. ; Akbarzadeh
Author_Institution :
VLSI Res. Group, Tehran Univ., Iran
fYear :
2005
fDate :
20-24 July 2005
Firstpage :
337
Lastpage :
340
Abstract :
Leakage current is becoming very important factor in determining the feasibility of designs, today. Due to exponential relationship between leakage current and threshold voltage in the weak inversion region, leakage power can no longer be ignored. In this paper we present a technique to accurately estimate leakage power by a linear model. In the first model the inputs are the number of all gates that used in circuit. And in the second model inputs are the number of gates and in the third model inputs are the number of input states of gates. The model is validated for a large benchmark circuits and the leakage power predicted by our model is within 5% of the actual leakage power predicted by a popular tool used in the industry.
Keywords :
VLSI; integrated circuit modelling; leakage currents; logic gates; VLSI circuits; leakage current; leakage power estimation; logic gates; threshold voltage; weak inversion region; Artificial intelligence; Circuit simulation; Computational modeling; Decision support systems; Equations; Phase estimation; Predictive models; Subthreshold current; Threshold voltage; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
Print_ISBN :
0-7695-2403-6
Type :
conf
DOI :
10.1109/IWSOC.2005.23
Filename :
1530967
Link To Document :
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