DocumentCode :
2391287
Title :
The mean depth of trap level of oriented, crystallized and γ-irradiated poly(ethylene terephthalate) electrets
Author :
Zhang, Xingyuan ; Zhou, Yiqin ; Zhang, Jixiang
Author_Institution :
Dept. of Appl. Chem., Univ. of Sci. & Technol. of China, Hefei, China
fYear :
1991
fDate :
25-27 Sep 1991
Firstpage :
55
Lastpage :
60
Abstract :
The mean depth of trap level is increased with increasing degree of planar orientation, crystallinity, and irradiation done in oriented, crystallized, and γ-irradiated PET electrets. The order of variation range for the trap depth is drawn, γ-irradiated, and annealed sample. Three kinds of trap models are proposed corresponding to the three methods of sample treatment on the basis of the depth of trap level, the current maximum of detrapping charge carriers, and the initial density of charge carriers
Keywords :
annealing; carrier density; electrets; electron traps; gamma-ray effects; hole traps; polymers; annealed sample; crystallinity; density of charge carriers; detrapping charge carriers; gamma -irradiated PET electrets; planar orientation; poly(ethylene terephthalate; trap depth; trap level; Annealing; Charge carriers; Crystallization; Electrets; Infrared detectors; Infrared spectra; Optical films; Polymers; Positron emission tomography; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
Conference_Location :
Berlin
Print_ISBN :
0-7803-0112-9
Type :
conf
DOI :
10.1109/ISE.1991.167182
Filename :
167182
Link To Document :
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