Title :
A high-gain InP D-HBT driver amplifier with 50 GHz bandwidth and 10 Vpp differential output swing at 40 Gb/s
Author :
Baeyens, Y. ; Weimann, N. ; Kopf, R. ; Roux, P. ; Houtsma, V. ; Yang, Y. ; Tate, A. ; Frackoviak, J. ; Weiner, J. ; Paschke, P. ; Chen, Y.K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
A high-performance and compact 40 Gb/s driver amplifier was realized in a 1.2 /spl mu/m emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology. The 2-stage differential driver features a lumped input and fully distributed output stage and delivers more then 10 Vpp output swing at 40 Gb/s with 700 fs RMS jitter and rise and fall times of less than 8 ps. On-wafer measured S-parameters show a differential gain of 25 dB, more than 50 GHz bandwidth and in- and output reflection below -20 dB from 2-45 GHz. The amplifiers small die size (1.0/spl times/1.7 mm), relatively low power consumption and ability to have DC coupled in- and outputs, should enable compact 40 Gb/s transmitters with good 40 Gb/s optical eye opening for both NRZ, RZ, duobinary and DPSK transmission formats.
Keywords :
III-V semiconductors; bipolar MIMIC; distributed amplifiers; driver circuits; gallium arsenide; indium compounds; millimetre wave power amplifiers; optical transmitters; 1.2 micron; 10 V; 2 to 45 GHz; 25 dB; 40 Gbit/s; 50 GHz; 8 ps; DC coupled inputs; DC coupled outputs; DPSK transmission format; InGaAs-InP; NRZ format; RZ format; S-parameters; amplifier differential output swing; differential gain; double heterojunction HBT; duobinary format; fully distributed output stage; high-gain D-HBT driver amplifier; input reflection; jitter; lumped input; output reflection; transmitter optical eye opening; Bandwidth; Differential amplifiers; Driver circuits; Gain measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Jitter; Optical amplifiers; Optical transmitters;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252384