Title :
Noble High Density Probe Memory using Ferroelectric Media beyond Sub-10 nm Generation
Author :
Yoo, D.C. ; Lee, C.M. ; Bae, B.J. ; Kim, I.S. ; Heo, J.E. ; Im, D.H. ; Choi, S.H. ; Park, S.O. ; Kim, H.S. ; Chung, U-in ; Moon, J.T. ; Ryu, B.-I. ; Kim, D.J. ; Noh, T.W.
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co. Ltd., Gyeonggi-Do
Abstract :
Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O3 (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at grain boundary region by PFM technique. Moreover, 15 nm-sized domain dot was successfully demonstrated on 50 nm-thick PZT media. Also for the first time, we successfully demonstrated that the polycrystalline ultra thin 7 nm-thick PZT media has good ferroelectric properties
Keywords :
chemical mechanical polishing; ferroelectric storage; ferroelectricity; lead compounds; memory architecture; nanoelectronics; titanium compounds; zirconium compounds; 15 nm; 50 nm; 7 nm; chemical-mechanical-polishing method; ferroelectric media; ferroelectric properties; high density probe memory; polycrystalline MOCVD; subnanometer generation; very even surface; Crystalline materials; Ferroelectric films; Ferroelectric materials; Grain boundaries; MOCVD; Magnetic materials; Probes; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346985
