Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor

Author

Kobayashi, Masaharu ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Tokyo Univ.

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

3

Abstract

We fabricated [100] and [110] directed nano wire MOSFET (NWFET), which works as NFET and PFET in the same channel. By comparing [100] and [110] direction, significantly small threshold voltage (V_th) fluctuation is experimentally observed in [110] PFET for the first time. This result supports the superiority of [110] NW PFET. Extremely narrow NWFET works as single-electron/single-hole transistors (SET/SHT). By comparing [100] and [110] direction, channel direction dependence of Coulomb blockade (CB) oscillations is experimentally clarified for the first time. We realize the highest performance in [100] SHT

Keywords

Coulomb blockade; MOSFET; nanowires; single electron transistors; Coulomb blockade oscillations; NFET; PFET; channel direction dependence; nanowire MOSFET; quantum structure; silicon nanowire; single-electron transistor; single-hole transistor; threshold voltage fluctuation; Controllability; Fluctuations; MOSFET circuits; Potential well; Quantum dots; Silicon; Single electron transistors; Threshold voltage; Tunneling; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346988

Filename

4154423