SiGe BiCMOS technologies for power amplifier applications

Author

Johnson, J.B. ; Joseph, A.J. ; Sheridan, D. ; Malladi, R.M.

Author_Institution

IBM Corp., Essex Junction, VT, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

179

Lastpage

182

Abstract

Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 /spl mu/m SiGe BiCMOS node. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless power amplifier applications are considered.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; semiconductor device breakdown; semiconductor materials; 0.5 micron; BiCMOS technologies; HBT scaling; SiGe; high-breakdown BiCMOS HBT; wireless power amplifiers; BiCMOS integrated circuits; Cutoff frequency; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Optical amplifiers; Power amplifiers; Silicon germanium; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252389

Filename

1252389