DocumentCode
2391433
Title
A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation
Author
Tsuji, Hiroyuki ; Kuzuoka, T. ; Kishida, Yuji ; Shimizu, Yukiyo ; Kirihara, M. ; Kamakura, Yoshinari ; Morifuji, Masato ; Miyano, S. ; Taniguchi, Kazuhiro
Author_Institution
Div. of Electr., Electron. & Inf. Eng., Osaka Univ.
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
A new surface potential based poly-Si TFT model for circuit simulation was developed, accounting for the influence of both deep and tail states across the band gap. The model describes the drain current for all regions of operation using the unified equation. Calculations using the drain current model produce results that are in good agreement with the measured I-V characteristics of poly-Si TFTs
Keywords
circuit simulation; semiconductor device models; surface potential; thin film transistors; band gap; circuit simulation; deep state; drain current model; poly-Si TFT model; surface potential; tail state; thin film transistor; Circuit simulation; Current measurement; Driver circuits; Electronic mail; Equations; MOSFETs; Photonic band gap; Predictive models; Tail; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346991
Filename
4154426
Link To Document