Title :
A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation
Author :
Tsuji, Hiroyuki ; Kuzuoka, T. ; Kishida, Yuji ; Shimizu, Yukiyo ; Kirihara, M. ; Kamakura, Yoshinari ; Morifuji, Masato ; Miyano, S. ; Taniguchi, Kazuhiro
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ.
Abstract :
A new surface potential based poly-Si TFT model for circuit simulation was developed, accounting for the influence of both deep and tail states across the band gap. The model describes the drain current for all regions of operation using the unified equation. Calculations using the drain current model produce results that are in good agreement with the measured I-V characteristics of poly-Si TFTs
Keywords :
circuit simulation; semiconductor device models; surface potential; thin film transistors; band gap; circuit simulation; deep state; drain current model; poly-Si TFT model; surface potential; tail state; thin film transistor; Circuit simulation; Current measurement; Driver circuits; Electronic mail; Equations; MOSFETs; Photonic band gap; Predictive models; Tail; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346991
