SiGe BiCMOS technology for highly integrated wireless transceivers

Author

Racanelli, M. ; Pingxi Ma ; Kempf, P.

Author_Institution

Jazz Semicond., Newport Beach, CA, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

183

Lastpage

186

Abstract

SiGe BiCMOS technology and circuit advances are reviewed with particular focus on achieving cost effective, highly integrated wireless transceivers including the prospects for integration of the power amplifier. Technology highlights include the realization of >200 GHz SiGe devices integrated with 0.13 /spl mu/m CMOS and the demonstration of 8-16 fF//spl mu/m/sup 2/ MIM capacitors utilizing high-k dielectrics. Circuit highlights include the demonstration of a 3 mW and a sub-1dB NF PCS LNA, an 802.11b transceiver with integrated 20 dBm PA, and the characterization of power cells capable of >62% PAE at 35 dBm of output power for GSM and >30% PAE at 27 dBm of linear output power for CDMA applications.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; power amplifiers; semiconductor materials; transceivers; 0.13 micron; 3 mW; 802.11b transceiver; BiCMOS technology; CDMA; GSM; MIM capacitors; PCS LNA; SiGe; high-k dielectrics; highly integrated wireless transceivers; integrated power amplifier; power cells; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; High power amplifiers; Integrated circuit technology; MIM capacitors; Power generation; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252390

Filename

1252390