Title :
Novel voltage-controlled oscillator design by MOS-NDR devices and circuits
Author :
Liang, Dong-Shong ; Gan, Kwang-Jow ; Hsiao, Chung-Chih ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang ; Shih-Yu Wane ; Kuo, Shun-Huo ; Chiang, Feng-Chang ; Su, Long-Xian
Abstract :
This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2 V power supply. This VCO is fabricated by 0.35 μm CMOS process and occupied an area of 120 × 86 μm2.
Keywords :
MOSFET; VHF oscillators; integrated circuit design; voltage-controlled oscillators; 0.35 micron; 151 to 268 MHz; 2 V; 24.5 mW; MOS-NDR devices; MOSFET devices; NDR characteristic; current-voltage curve; low-power MOS-NDR inverter; negative differential resistance devices; voltage-controlled oscillator; CMOS process; Circuits; Frequency; Gallium nitride; Inverters; Logic devices; MOS devices; System-on-a-chip; Voltage; Voltage-controlled oscillators;
Conference_Titel :
System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
Print_ISBN :
0-7695-2403-6
DOI :
10.1109/IWSOC.2005.87
