Title :
Logic circuit design based on MOS-NDR devices and circuits fabricated by CMOS process
Author :
Gan, Kwang-Jow ; Hsiao, Chung-Chih ; Wang, Shih-Yu ; Chiang, Feng-Chang ; Tsai, Cher-Shiung ; Yaw-Hwang Chen ; Kuo, Shun-Huo ; Chi-Pin Chen ; Liang, Dong-Shong
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ. of Technol., Tainan, Taiwan
Abstract :
We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and NAND gates. The devices and circuits are fabricated by the standard 0.35μm CMOS process.
Keywords :
CMOS logic circuits; MOSFET; logic design; logic gates; 0.35 micron; CMOS process; MOS parameters; MOS-NDR devices; MOSFET devices; NAND gates; NOR gates; current-voltage characteristics; inverter gates; logic circuit design; negative differential resistance characteristics; CMOS process; CMOS technology; Circuit simulation; Gallium nitride; Inverters; Logic circuits; Logic devices; MOS devices; MOSFETs; Voltage;
Conference_Titel :
System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
Print_ISBN :
0-7695-2403-6
DOI :
10.1109/IWSOC.2005.80
