DocumentCode
2391536
Title
Logic circuit design based on MOS-NDR devices and circuits fabricated by CMOS process
Author
Gan, Kwang-Jow ; Hsiao, Chung-Chih ; Wang, Shih-Yu ; Chiang, Feng-Chang ; Tsai, Cher-Shiung ; Yaw-Hwang Chen ; Kuo, Shun-Huo ; Chi-Pin Chen ; Liang, Dong-Shong
Author_Institution
Dept. of Electron. Eng., Kun Shan Univ. of Technol., Tainan, Taiwan
fYear
2005
fDate
20-24 July 2005
Firstpage
392
Lastpage
395
Abstract
We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and NAND gates. The devices and circuits are fabricated by the standard 0.35μm CMOS process.
Keywords
CMOS logic circuits; MOSFET; logic design; logic gates; 0.35 micron; CMOS process; MOS parameters; MOS-NDR devices; MOSFET devices; NAND gates; NOR gates; current-voltage characteristics; inverter gates; logic circuit design; negative differential resistance characteristics; CMOS process; CMOS technology; Circuit simulation; Gallium nitride; Inverters; Logic circuits; Logic devices; MOS devices; MOSFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
Print_ISBN
0-7695-2403-6
Type
conf
DOI
10.1109/IWSOC.2005.80
Filename
1530978
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