DocumentCode
2391566
Title
Circuit Technologies for Reducing the Power of SOC and Issues on Transistor Models
Author
Ishibashi, Koichiro ; Ohbayashi, Shigeki ; Eikyu, Katsumi ; Tanizawa, Motoaki ; Tsukamoto, Yasumasa ; Osada, Kenichi ; Miyazaki, Masayuki ; Yamaoka, Masanao
Author_Institution
Renesas Technol. Corp., Tokyo
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
The obstacles for low power SOC are leakage and variability of MOS transistors. Many circuit techniques have been proposed to tackle these issues. An adaptive body bias technique for logics and a source line voltage control technique for memories are inevitable techniques. Precise analysis of timing for logics and electrical stability for memories are keys to optimizing low voltage operations and they need precise Spice models that handle the variability
Keywords
MOSFET; SPICE; low-power electronics; semiconductor device models; system-on-chip; MOS transistors; Spice models; circuit technology; electrical stability; low power SOC; power reduction; transistor models; CMOS logic circuits; CMOS technology; Delay effects; Frequency; Large scale integration; MOSFETs; Moore´s Law; Stability analysis; Timing; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346996
Filename
4154431
Link To Document