Title :
High-speed InP/InGaAs DHBTs with a thin pseudomorphic base
Author :
Ida, M. ; Kurishima, K. ; Ishii, K. ; Watanabe, N.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
We describe thin collector InP-based double heterojunction bipolar transistors with a thin pseudomorphic base for achieving high f/sub T/ and f/sub max/. Over-300-GHz f/sub T/ and f/sub max/ are obtained with high uniformity across a 3-inch wafer. We demonstrate an ECL gate delay of 3.48 ps/stage in a 19-stage ring-oscillator using the technology. To our knowledge, this is the first report of sub-4-ps ECL gate delay, Moreover, a record f/sub max/ in mesa HBTs of 492 GHz is also demonstrated by a further lateral scaling of DHBTs.
Keywords :
III-V semiconductors; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; 3 inch; 3.48 ps; 300 GHz; 492 GHz; DHBT lateral scaling; ECL gate delay; InP-InGaAs; high-speed DHBT; mesa HBT; ring-oscillator; thin collector double heterojunction bipolar transistors; thin pseudomorphic base; Delay; Doping; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Logic; Photonics;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252396
