Title :
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit
Author :
van Rijs, F. ; Theeuwen, S.J.C.H.
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
The paper presents the evolution in LDMOST technology of the last decade, leading to a present 32 percent efficiency value for a two carrier W-CDMA signal with -37dBc IM3 and discusses future prospects to increase the performance even further. The achieved reduction of parasitic elements currently opens the way for system concepts such as high efficiency classes and Doherty type concepts
Keywords :
MOSFET; code division multiple access; Doherty type concepts; LDMOS transistors; W-CDMA signal; Base stations; Broadband amplifiers; Continuous improvement; Lead compounds; Linearity; Multiaccess communication; Performance gain; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346998
