Title :
Submicron scaling InP/InGaAs single heterojunction bipolar transistor technology with f/sub T/ > 400 GHz for >100 GHz applications
Author :
Lai, J.W. ; Hafez, W. ; Chan, R. ; Chuang, Y.J. ; Caruth, D. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We describe a high-speed triple metal InP SHBT technology in this paper. With respect to scaling, we have measured f/sub T/ from 300 GHz to 450 GHz, and f/sub MAX/ from 200 GHz to 380 GHz. The proposed technology also features triple metal interconnections, MIM capacitors and NiCr thin film resistors. A CML static frequency divider is designed and simulated from DC to 122 GHz toggling rate at a power consumption of 141 mW.
Keywords :
III-V semiconductors; MIM devices; bipolar integrated circuits; chromium alloys; current-mode logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; nickel alloys; submillimetre wave transistors; thin film capacitors; thin film resistors; 122 GHz; 141 mW; 200 to 380 GHz; 300 to 450 GHz; CML static frequency divider; InP-InGaAs; MIM capacitor; NiCr; SHBT submicron scaling; high-speed triple metal SHBT technology; single heterojunction bipolar transistor technology; thin film resistor; triple metal interconnection; Application software; Current density; Energy consumption; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; MIM capacitors; Parasitic capacitance; Resistors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252397
