DocumentCode :
2391599
Title :
Design and fabrication of condenser microphone using wafer transfer and micro-electroplating technique
Author :
Shu, Zhen-Zhun ; Ke, Ming-Li ; Chen, Guan-Wei ; Horng, Ray-Hua ; Chang, Chao-Chih ; Tsai, Jean-Yih ; Lai, Chung-Ching ; Chen, Ji-Liang
Author_Institution :
Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung
fYear :
2008
fDate :
9-11 April 2008
Firstpage :
386
Lastpage :
390
Abstract :
A novel fabrication process, which uses wafer transfer and micro-electroplating technique, has been proposed and tested. In this paper, the effects of the diaphragm thickness andstress, the air-gap thickness, and the area ratio of acoustic holes to backplate on the sensitivity of the condenser microphone have been demonstrated since the performance of the microphone depends on these parameters. The microphone diaphragm has been designed with a diameter and thickness of 1.9 mm and 0.6 mum, respectively, an air-gap thickness of 10 mum, and a 24% area ratio of acoustic holes to backplate. To obtain a lower initial stress, the material used for the diaphragm is polyimide. The measured sensitivities of the microphone at the bias voltages of 24 V and12 V are -45.3 and -50.2 dB/Pa (at 1 kHz), respectively. The fabricated microphone shows aflat frequency response extending to 20 kHz.
Keywords :
capacitors; diaphragms; electroplating; frequency response; microphones; microsensors; acoustic hole-to-backplate area ratio; air-gap thickness; bias voltages; condenser microphone; diaphragm; flat frequency response; frequency 20 kHz; micro-electroplating technique; sensitivities; size 0.6 mum; size 1.9 mm; size 10 mum; voltage 12 V; voltage 24 V; wafer transfer; Acoustic transducers; Air gaps; Electronic equipment testing; Fabrication; Frequency; Microphones; Polyimides; Silicon; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location :
Nice
Print_ISBN :
978-2-35500-006-5
Type :
conf
DOI :
10.1109/DTIP.2008.4753025
Filename :
4753025
Link To Document :
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