Title :
Hole Trapping and de-Trapping Effects in LDMOS Devices under Dynamic Stress
Author :
Moens, P. ; Bosch, G. Van ; Tack, M.
Author_Institution :
AMI Semicond., Oudenaarde
Abstract :
The effects of hole trapping and de-trapping in lateral DMOS transistors under hot carrier stress are studied. It is shown that the stress sequence has an important effect on how degradation is induced in the device. Experimental evidence is provided that hot hole trapping in the device birds beak is a dynamic effect. A model is proposed
Keywords :
MOSFET; hole traps; hot carriers; LDMOS devices; de-trapping effects; dynamic stress; hole trapping; hot carrier stress; lateral DMOS transistors; Ambient intelligence; Automotive engineering; Birds; Charge pumps; Degradation; Hot carriers; Semiconductor device modeling; Stress; Vehicle dynamics; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346999
