Title :
6-k/spl Omega/, 43-Gb/s differential transimpedance-limiting amplifier with auto-zero feedback and high dynamic range
Author :
Hai Tran ; Pera, F. ; McPherson, D.S. ; Viorel, D. ; Voinigescu, S.P.
Author_Institution :
Quake Technol. Inc., Ottawa, Ont., Canada
Abstract :
A high-gain, 43-Gb/s InP HBT transimpedance-limiting-amplifier (TIALA) with 100-/spl mu/A/sub pp/ sensitivity and 4.5-mA/sub pp/ input overload current is presented. The circuit also operates as a limiting amplifier with 40-dB differential gain, better than -15-dB input return loss, and a record-breaking sensitivity of 8 mV/sub pp/ at 43 Gb/s. It features a differential TIA stage with inductive noise suppression in the feedback network and consumes less than 450-mW from a single 3.3-V supply. The TIALA has 6-k/spl Omega/ (76 dB/spl Omega/) differential transimpedance gain, 35-GHz bandwidth, and comprises the transimpedance and limiting gain functions, an auto-zero DC feedback circuit, signal level monitor and slicing level adjust functions. Other important features include 45-dB isolation and 800-mV/sub pp/ differential output.
Keywords :
III-V semiconductors; bipolar MIMIC; differential amplifiers; feedback amplifiers; indium compounds; limiters; millimetre wave amplifiers; 100 muA; 15 dB; 3.3 V; 35 GHz; 4.5 mA; 40 dB; 43 Gbit/s; 450 mW; 6 kohm; 8 mV; 800 mV; HBT TIALA; InP; auto-zero feedback; differential transimpedance-limiting amplifier; gain limiting functions; high dynamic range amplifier; inductive noise suppression; input overload current; signal level monitor; slicing level adjust function; Bandwidth; Circuits; Differential amplifiers; Dynamic range; Feedback; Heterojunction bipolar transistors; Indium phosphide; Noise reduction; Resistors; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252403
