DocumentCode
2391772
Title
An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth
Author
Weiner, J.S. ; Lee, J.S. ; Leven, A. ; Baeyens, Y. ; Houtsma, V. ; Georgiou, G. ; Yang, Y. ; Frackoviak, J. ; Tate, A. ; Reyes, R. ; Kopf, R.F. ; Sung, W.J. ; Weimann, N.G. ; Chen, Y.K.
Author_Institution
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear
2003
fDate
9-12 Nov. 2003
Firstpage
245
Lastpage
248
Abstract
In this paper, we describe an InGaAs/InP heterostructure bipolar transistor differential transimpedance amplifier with high bandwidth of 47 GHz and high gain of 56 dB-ohms.
Keywords
III-V semiconductors; MMIC amplifiers; S-parameters; bipolar MIMIC; bipolar MMIC; differential amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; millimetre wave amplifiers; optical receivers; 47 GHz; HBT differential transimpedance amplifier; InGaAs-InP; MMIC; OEIC; S-parameters; emitter followers; high bandwidth; high gain; optical receiver; output buffer; transadmittance-transimpedance stage; Bandwidth; Circuits; Differential amplifiers; Feedback; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resistors; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location
San Diego, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-7833-4
Type
conf
DOI
10.1109/GAAS.2003.1252404
Filename
1252404
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