Title :
Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm
Author :
Sato, Motoyuki ; Nakasaki, Yasushi ; Watanabe, Koji ; Aoyama, Tomonori ; Hasegawa, Eiji ; Koyama, Masato ; Sekine, Katsuyuki ; Eguchi, Kazuhiro ; Saito, Masaki ; Tsunashima, Yoshitaka
Author_Institution :
Semicond. Co., Toshiba Corp., Isogo-ku Yokohama
Abstract :
The authors have demonstrated the stacked MOCVD HfSiON gate dielectrics with extremely low Hf concentration (Hf/(Hf+Si)=6%) cap (LHC) which realized improved mobility and superior long-term reliability of CMOSFETs while maintaining low gate leakage currents and EOT scalability to 1nm. These superior electrical characteristics of the film are mainly owing to the suppression of the Vo2+ formation in the LHC layer, which is evidenced by first principle calculation
Keywords :
MOCVD; MOSFET; dielectric materials; hafnium compounds; leakage currents; reliability; silicon compounds; CMOSFET; EOT scalability; HfSiON; cap layer; leakage currents; reliability improvement; stacked MOCVD gate dielectrics; very low Hf concentration; Atomic measurements; CMOSFETs; Dielectric measurements; Electric variables; Electron traps; Hafnium; Large Hadron Collider; Leakage current; Nitrogen; Semiconductor films;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.347008
