DocumentCode :
2391795
Title :
A DC-40 GHZ InP HBT Gilbert multiplier
Author :
Kobayashi, K.W.
Author_Institution :
Sirenza Microdevices, Torrance, CA, USA
fYear :
2003
fDate :
9-12 Nov. 2003
Firstpage :
251
Lastpage :
254
Abstract :
This work features an InP HBT Gilbert multiplier which achieves 12 dB conversion gain over a DC-40 GHz bandwidth (BW). The corresponding GBP (gain-bandwidth product) is 159.2 GHz and is believe to be the highest so far reported for a multi-decade BW Gilbert multiplier IC in any technology. The multiplier integrates RF, LO, and IF buffer amplifiers each of which possesses /spl sim/10 dB gain and DC to > 40 GHz bandwidth. When characterized as a linear VGA (variable gain amplifier), the IC obtains a maximum gain of 20 dB with a 40 GHz bandwidth, and 40 dB of dynamic gain control range. The InP HBT analog multiplier demonstrates performance which can enable high speed universal modulator, radiometer, phased array antenna, and instrumentation applications.
Keywords :
III-V semiconductors; analogue multipliers; bipolar MIMIC; bipolar analogue integrated circuits; indium compounds; millimetre wave amplifiers; millimetre wave mixers; modulators; 20 dB; 40 GHz; HBT Gilbert multiplier; InP; RF mixer; analog multiplier; gain-bandwidth product; high bandwidth; linear variable gain amplifier; universal modulator; wideband frequency performance; Bandwidth; Dynamic range; Gain control; Heterojunction bipolar transistors; Indium phosphide; Phase modulation; Phased arrays; Radio frequency; Radiofrequency amplifiers; Radiometry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-7833-4
Type :
conf
DOI :
10.1109/GAAS.2003.1252405
Filename :
1252405
Link To Document :
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