Title :
A 18-45 GHz double-balanced mixer with integrated LO amplifier and unique suspended broadside-coupled balun
Author :
Morkner, H. ; Kumar, S. ; Vice, M.
Author_Institution :
Wireless Semicond. Div., Agilent Technol., San Jose, CA, USA
Abstract :
An ultra wide band double-balanced mixer with integrated LO buffer amplifier has been developed using 0.15u depletion mode PHEMT technology. The mixer employs a unique broadside-coupled balun for superior 18-45 GHz bandwidth and overcomes many of the disadvantages of edge coupled transmission lines in microstrip or stripline. The mixer utilizes GaAs HEMT S-D diode mixing and integrates LO power amplifier to ease the drive requirements typically associated with this type of mixing. The LO amplifier has a distributed input stage and sequential traditional common source FETs for efficient power amplification. The LO can also be sub-harmonically pumped for 2/spl times/ frequency multiplication as well as fundamentally driven. The result is a mixer capable of -10 dB conversion gain for up or down mixing across many commercial frequency bands for 18-45 GHz. LO power requires only 0 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; MMIC power amplifiers; baluns; field effect MIMIC; field effect MMIC; gallium arsenide; millimetre wave mixers; millimetre wave power amplifiers; 18 to 45 GHz; GaAs; MMIC; depletion mode PHEMT; distributed input stage; double-balanced mixer; integrated LO buffer amplifier; power amplifier; sequential traditional common source FET; suspended broadside-coupled balun; ultrawideband mixer; Bandwidth; Couplings; Frequency conversion; Impedance matching; Microstrip; PHEMTs; Power amplifiers; Power transmission lines; Stripline; Ultra wideband technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252409
