A highly integrated quad-band GSM TX-front-end-module

Author

DiCarlo, P. ; Boerman, S. ; Burton, R. ; Chung, H.-C. ; Evans, D. ; Gerard, M. ; Gering, J. ; Khayo, I. ; Lagrandier, L. ; Lalicevic, I. ; Reginella, P. ; Sprinkle, S. ; Tkachenko, Y.

Author_Institution

Skyworks Solutions, Woburn, MA, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

280

Lastpage

283

Abstract

In this paper, we describe a highly integrated, quad-band (UGSM/EGSM/DCS/PCS), transmit, front-end module (TX-FEM) integrating power amplifiers, a PA controller, T/R switches, a switch controller, a dual-band directional detector/coupler, a diplexer, matching networks and harmonic filters in a single, 50 /spl Omega/ input and output, 9/spl times/10/spl times/1.5mm package. The module employs InGaP/GaAs HBT, AlGaAs/InGaAs/AlGaAs PHEMT, GaAs Schottky/passive, and Si Schottky/bipolar/CMOS semiconductor technologies and to the authors´ best knowledge demonstrates the highest level of integration for a TX-FEM ever reported The module utilizes the excellent performance and ruggedness characteristics of the Skyworks fourth generation HBT process and features 34dBm Pout with 45% PAE GSM and 31dBm Pout and 36% PAE DCS/PCS performance, while meeting a VSWR>20:1 open loop ruggedness spec.

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar analogue integrated circuits; cellular radio; elemental semiconductors; gallium arsenide; indium compounds; radio transmitters; silicon; AlGaAs-InGaAs-AlGaAs; GSM module; HBT process; InGaP-GaAs; MESFET processes; PHEMT; Si; cellular phones; diplexer; dual-band directional detector/coupler; highly integrated quad-band module; internal filtering; power amplifiers; power-added efficiency; ruggedness; switch controller; transmit front-end module; CMOS technology; Detectors; Distributed control; Dual band; GSM; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Personal communication networks; Power semiconductor switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252411

Filename

1252411