Title :
A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs
Author :
Tsunashima, S. ; Murata, K. ; Ida, M. ; Kurishima, K. ; Kosugi, T. ; Enoki, T. ; Sugahara, H.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
An ultrahigh-speed frequency divider IC using InP/InGaAs DHBTs was developed. A clocked-inverter feed-forward toggle flip-flop is employed in the IC. The maximum measurement frequency of the IC is 150 GHz. To the best of our knowledge, the operating frequency is fastest frequency divider so far reported.
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar logic circuits; feedforward; flip-flops; frequency dividers; gallium arsenide; indium compounds; millimetre wave frequency convertors; very high speed integrated circuits; 150 GHz; HBT IC; InP-InGaAs; clocked-inverter feedforward toggle flip-flop; collector current density; digital type configuration; dynamic frequency divider; self-oscillation frequency; ultrahigh-speed frequency divider; Clocks; Current density; Double heterojunction bipolar transistors; Frequency conversion; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Logic; Probes; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252412
