A high efficiency 3GHz 24-dBm CMOS linear power amplifier for RF application

Author

Hasan, S. M Rezaul

Author_Institution

Inst. of Inf. & Math. Sci., Massey Univ., Auckland, New Zealand

fYear

2005

fDate

20-24 July 2005

Firstpage

503

Lastpage

507

Abstract

This paper presents an improved CMOS class AB power amplifier for radio frequency (RF) applications. The power amplifier along with the pre-amplification stage has a fully differential structure suitable for mixed-signal system-on-chip (SOC) implementation. Thorough simulations using a 3 V single-ended power supply and 0.18μm TSMC CMOS process technology indicate a capability to deliver 24dBm to a 50Ω antenna at a resonant frequency of 3 GHz with a drain efficiency of almost 50%. In addition, the transient output waveform (@ 3GHz) indicates a high degree of linearity in the output with a total harmonic distortion (THD) of around -58dB.

Keywords

CMOS integrated circuits; UHF power amplifiers; circuit simulation; harmonic distortion; preamplifiers; system-on-chip; 0.18 micron; 3 GHz; 3 V; 50 ohm; CMOS class AB power amplifier; CMOS linear power amplifier; CMOS process technology; drain efficiency; mixed-signal system-on-chip implementation; pre-amplification stage; radiofrequency application; resonant frequency; single-ended power supply; total harmonic distortion; transient output waveform; CMOS process; CMOS technology; Differential amplifiers; High power amplifiers; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Resonant frequency; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on

Print_ISBN

0-7695-2403-6

Type

conf

DOI

10.1109/IWSOC.2005.11

Filename

1530999