DocumentCode
2392006
Title
DARPA´s program on Antimonide Based Compound Semiconductors (ABCS)
Author
Rosker, M. ; Shah, J.
Author_Institution
Microsystems Technol. Office, Defense Adv. Res. Projects Agency, Arlington, VA, USA
fYear
2003
fDate
9-12 Nov. 2003
Firstpage
293
Abstract
Summary form only given. The objective of DARPA´s ABCS (Antimonide Based Compound Semiconductors) Program is to demonstrate low power dissipation, high frequency integrated circuits (up to 5000 components per chip) exploiting the high mobility and small bandgaps of 6.1 Å semiconductors. This talk will present an overview of the program and then discuss some exciting new results.
Keywords
HEMT integrated circuits; bipolar integrated circuits; integrated circuit design; integrated circuit noise; low-power electronics; DARPA Program; HBT devices; HEMT devices; antimonide based compound semiconductors; circuit design; high frequency integrated circuits; high mobility; high speed integrated circuits; low noise figure; low power dissipation; low-defect substrate technology; small bandgaps; Integrated circuit technology; Photonic band gap; Power dissipation; Power engineering and energy; Power integrated circuits; Space technology; Substrates; Systems engineering and theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location
San Diego, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-7833-4
Type
conf
DOI
10.1109/GAAS.2003.1252414
Filename
1252414
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