Title :
MOSFET simulation - TCAD tools/packages
Author :
Campian, I. ; Profirescu, O.-G. ; Ungureanu, Alina ; Babarada, Florin ; Lakatos, Eugen ; Amza, Claudiu
Author_Institution :
Politehnic Inst. of Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
Industry-standard TCAD software packages are widely used by semiconductor companies to optimise processes and devices in integrated circuits fabrication. After process and device simulation one can go ahead with circuit simulation using Spice. This paper focuses on the matching of these program packages in the area of parameter and characteristics extraction. We compared the transfer characteristics of n-type MOSFET, biased in the linear region, obtained from Synopsys package including TSUPREM4 and MEDICI with transfer characteristics from PSpice package.
Keywords :
MOSFET; SPICE; semiconductor device models; technology CAD (electronics); MEDICI; MOSFET simulation; Spice; Synopsys package; TSUPREM4; characteristics extraction; circuit simulation; industry-standard TCAD software packages; integrated circuits fabrication; n-type MOSFET; parameter extraction; transfer characteristics; Circuit simulation; Computational modeling; Doping; Integrated circuit technology; MOSFET circuits; Medical simulation; Oxidation; Predictive models; Semiconductor device packaging; Thermal stresses;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252425
