An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protections

Author

Pérez, A. ; Jordà, X. ; Godignon, P. ; Vellvehí, M. ; Gálvez, J.L. ; Millán, J.

Author_Institution

Centre Nacional de Microelectron., Bellaterra, Spain

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

This paper presents a monolithic IGBT gate driver design with an original full-bridge topology output stage, implemented with high voltage LDMOSFETS (36-160V/1A) for power integrated circuits using standard low cost 2.5□m CMOS technology and oriented for digital applications. Short circuit protections have been also integrated. The full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply and the implementation of a soft shutdown process following a short circuit fault can be easily reached.

Keywords

CMOS digital integrated circuits; insulated gate bipolar transistors; power semiconductor devices; short-circuit currents; 1 A; 36 to 160 V; CMOS technology; IGBT gate driver integrated circuit; digital applications; full-bridge output stage; negative gate voltages; positive gate voltages; power integrated circuits; short circuit protections; single floating power supply; soft shutdown process; CMOS digital integrated circuits; CMOS technology; Circuit topology; Costs; Driver circuits; Insulated gate bipolar transistors; Integrated circuit technology; Power integrated circuits; Protection; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252427

Filename

1252427