Title :
Current transport mechanisms in 4H-SiC pin diodes
Author :
Camara, N. ; Bano, E. ; Zekentes, K.
Author_Institution :
IMEP, ENSERG, Grenoble, France
fDate :
28 Sept.-2 Oct. 2003
Abstract :
Current transport mechanisms in 4H-SiC pn diodes have been investigated by current-voltage and under-bias-photoemission experiments. In low voltages (1.9 to 2.6 Volts) current recombination dominates forward current. Moreover, carrier recombination takes place on the perimeter of the diodes. From 2.6 to 2.8 Volts a mixed conduction with recombination and diffusion components or recombination through multielectron centers in the space charge region is observed.
Keywords :
carrier mobility; p-i-n diodes; photoemission; silicon compounds; wide band gap semiconductors; 1.9 to 2.6 V; 4H-SiC pin diodes; SiC; current transport mechanisms; current-voltage; diffusion components; mixed conduction; recombination through multielectron centers; space charge region; under-bias-photoemission; Breakdown voltage; Current measurement; Diodes; Doping; Epitaxial growth; Fabrication; Leakage current; Low voltage; Silicon carbide; Space charge;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252428
