Title :
Complementary high voltage MOSFETs using a modified standard CMOS process
Author :
Pérez, A. ; Jordà, X. ; Godignon, P. ; Vellvehí, M. ; Rebollo, J. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., Bellaterra, Spain
fDate :
28 Sept.-2 Oct. 2003
Abstract :
This paper presents a new high voltage technology for power integrated circuits using standard low cost 2.5 μm CMOS technology and oriented for digital applications, with only one extra processing step. Lateral N- and P-MOSFET transistors have been optimized using 2D simulators attending both specific on-resistance and breakdown voltage. Lateral double diffused n-channel transistors with breakdown voltage of 160V (Ron= 13.5mΩ·cm2) have been achieved. Extended drain P-MOSFET transistors with low on-resistance and breakdown voltage of 36V (Ron=2.0mΩ·cm2) have been also implemented.
Keywords :
CMOS digital integrated circuits; power MOSFET; power integrated circuits; semiconductor device breakdown; 160 V; 2.5 micron; 2D simulators; 36 V; breakdown voltage; complementary high voltage MOSFETs; digital applications; extended drain P-MOSFET transistors; modified standard CMOS process; power integrated circuits; specific on-resistance; CMOS process; CMOS technology; Circuit simulation; Costs; Design optimization; Integrated circuit technology; MOSFET circuits; Paper technology; Power integrated circuits; Voltage;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252431
