Title :
2.4GHz power amplifier with adaptive bias circuit
Author :
Wenyuan Li ; Yulong Tan
Author_Institution :
Inst. of RF, OE-ICs Southeast Univ., Nanjing, China
Abstract :
A 2.4GHz power amplifier is designed using the HHNEC BiCMOS 0.18μm technology. The pseudo-differential structure and adaptive bias control technique are used to improve the performance. The load-pull technique is used for finding the adequate impedance values which provides the maximum output power. The simulation results show that under a supply voltage of 3.3V, P1dB is better than 23dBm and PAE is better than 17%.
Keywords :
BiCMOS integrated circuits; power amplifiers; HHNEC BiCMOS 0.18μm technology; adaptive bias circuit; adaptive bias control technique; adequate impedance value; frequency 2.4 GHz; load-pull technique; power amplifier; pseudo-differential structure; size 0.18 mum; BiCMOS integrated circuits; Impedance; Impedance matching; Power amplifiers; Power generation; Radio frequency; Silicon germanium; Adaptive Bias Circuit; Load-Pull; Power Amplifier; SiGe BiCMOS;
Conference_Titel :
Systems and Informatics (ICSAI), 2012 International Conference on
Conference_Location :
Yantai
Print_ISBN :
978-1-4673-0198-5
DOI :
10.1109/ICSAI.2012.6223298
