Electrical parameter variation of PT-IGBT by backside proton irradiation

Author

Jordà, X. ; Vobecký, J. ; Godignon, P. ; Perpiña, X. ; Vellvehi, M. ; Hazdra, P. ; Millán, J.

Author_Institution

Centre Nacional de Microelectron., Bellaterra, Spain

Volume

2

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

This paper describes the lifetime killing processes performed on 600V PT-IGBTs in order to improve their switching behaviour. The devices were proton irradiated from the backside at different doses and ion penetration ranges. Static and dynamic characterization allowed determining the effect of both variables on forward voltage drop, turn-off time and leakage current. Optimal irradiation conditions have been identified to reach the best trade-off between these electrical parameters.

Keywords

insulated gate bipolar transistors; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor switches; 600 V; PT-IGBT; backside proton irradiation; doses; dynamic characterization; electrical parameter variation; forward voltage drop; ion penetration ranges; leakage current; lifetime killing processes; static characterization; switching behaviour; turn-off time; Charge carrier lifetime; Doping; Electrons; Gold; Insulated gate bipolar transistors; Leakage current; Microelectronics; Protons; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1252437

Filename

1252437