Title :
Electrical parameter variation of PT-IGBT by backside proton irradiation
Author :
Jordà, X. ; Vobecký, J. ; Godignon, P. ; Perpiña, X. ; Vellvehi, M. ; Hazdra, P. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., Bellaterra, Spain
fDate :
28 Sept.-2 Oct. 2003
Abstract :
This paper describes the lifetime killing processes performed on 600V PT-IGBTs in order to improve their switching behaviour. The devices were proton irradiated from the backside at different doses and ion penetration ranges. Static and dynamic characterization allowed determining the effect of both variables on forward voltage drop, turn-off time and leakage current. Optimal irradiation conditions have been identified to reach the best trade-off between these electrical parameters.
Keywords :
insulated gate bipolar transistors; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor switches; 600 V; PT-IGBT; backside proton irradiation; doses; dynamic characterization; electrical parameter variation; forward voltage drop; ion penetration ranges; leakage current; lifetime killing processes; static characterization; switching behaviour; turn-off time; Charge carrier lifetime; Doping; Electrons; Gold; Insulated gate bipolar transistors; Leakage current; Microelectronics; Protons; Substrates; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252437
