Sleep signal slew rate modulation for mode transition noise suppression in ground gated integrated circuits

Author

Jiao, Hailong ; Kursun, Volkan

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2011

fDate

26-28 Sept. 2011

Firstpage

365

Lastpage

370

Abstract

Ground bouncing noise produced during SLEEP to ACTIVE mode transitions is an important reliability concern in multi-threshold CMOS (MTCMOS) circuits. Single-phase and multi-phase sleep signal slew rate modulation techniques are explored in this paper to drastically suppress ground bouncing noise in MTCMOS circuits. Reactivation time, reactivation energy, leakage power consumption, and layout area of different MTCMOS circuits are characterized under an equi-noise constraint with a UMC 80 nm CMOS technology.

Keywords

CMOS integrated circuits; integrated circuit noise; integrated circuit reliability; interference suppression; ACTIVE mode transitions; SLEEP mode transitions; UMC CMOS technology; equinoise constraint; ground bouncing noise suppression; ground gated integrated circuits; leakage power consumption; mode transition noise suppression; multiphase sleep signal slew rate modulation techniques; multithreshold CMOS circuits; reactivation energy; reactivation time; single-phase sleep signal slew rate modulation techniques; size 80 nm; Adders; CMOS integrated circuits; Delay; Modulation; Noise; Switching circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOC Conference (SOCC), 2011 IEEE International

Conference_Location

Taipei

ISSN

2164-1676

Print_ISBN

978-1-4577-1616-4

Electronic_ISBN

2164-1676

Type

conf

DOI

10.1109/SOCC.2011.6085093

Filename

6085093