Title :
Controllable deposition of CdS, CIGS and heterostructures thin films by means of e-beam ablation technology
Author :
Andriesh, A.M. ; Verlan, V.I. ; Malahova, L.A.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova
fDate :
28 Sept.-2 Oct. 2003
Abstract :
The technology of controlled deposition of CdS and CuIn1-xGaxSe2 (CIGS) polycrystalline films consisting in of electron-beam (e-beam) ablation deposition at the first stage and subsequent procedure of heat treatment in vapors of a selenium or sulfur for CIGS and CdS accordingly on second was developed. The obtained heterostructures CdS/CuIn1-xGaxSe2 display good photovoltaic properties. Admittance spectroscopy and optical absorption was applied for determination of density of concentration of deep states (N(E)), optimization of deposition process and photovoltaic properties. The continuous distribution N(E) and new type of metastable centers have been found.
Keywords :
II-VI semiconductors; cadmium compounds; deep levels; electron beam deposition; gallium compounds; indium compounds; photovoltaic effects; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; ternary semiconductors; CIGS; CdS; CuIn1-xGaxSe2; admittance spectroscopy; controllable deposition; deep states; e-beam ablation technology; electron-beam ablation deposition; heat treatment; heterostructures; optical absorption; photovoltaic properties; thin films; Absorption; Admittance; Displays; Heat treatment; Optical films; Photovoltaic systems; Solar power generation; Spectroscopy; Sputtering; Temperature control;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1252441
