DocumentCode
2392628
Title
Broad band amplifier up to 30GHz with 0.25μm SiGe technology
Author
Torres, Jorge Alves ; Freire, Costa J.
fYear
2007
fDate
Oct. 29 2007-Nov. 1 2007
Firstpage
166
Lastpage
169
Abstract
In this paper the results on a study of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30GHz are discussed. Spiral inductors with SRF higher than 30GHz are not available at the foundry library. Accordingly, inductors wit a SRF higher than 45GHz and a Q of 5 at 30GHz were obtained. The design, implementation and test of a broad band feedback resistive amplifier are also presented. It has a 3dB bandwidth from 12 to 32GHz and ldB bandwidth of 11GHz, a maximum gain of lOdB and return losses better then lOdB.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; millimetre wave amplifiers; wideband amplifiers; BiCMOS technology; MMIC; SiGe:C; broad band amplifier; foundry library; frequency 11 GHz; frequency 12 GHz to 32 GHz; gain 10 dB; size 0.25 mum; spiral inductors; Bandwidth; BiCMOS integrated circuits; Costs; Foundries; Germanium silicon alloys; Inductors; Libraries; Silicon germanium; Spirals; Testing; Broad band amplifiers; SiGe MMIC; millimeterwave; spiral inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International
Conference_Location
Brazil
Print_ISBN
978-1-4244-0661-6
Electronic_ISBN
978-1-4244-0661-6
Type
conf
DOI
10.1109/IMOC.2007.4404237
Filename
4404237
Link To Document