Small area cross type integrated inductor in CMOS Technology

This paper describes the design and simulation, using the SONNET tool, of a new inductor structure with crossed segments (cross). In order to compare, the new and conventional rectangular inductors were designed using a 0.35 mum CMOS technology. To make a fair comparison we fixed the segment width and spacing to 10 mum. After the design, the cross inductor presents an area of 120times140 mum², an inductance of 1.75 nH and Q of 4.1 at 8 GHz, while the square planar inductor presents an area of 180times180 mum², an inductance of 1.65 nH and Q of 5.5 at 8 GHz. Thus, the square inductor occupies 92% more area than the cross inductor.