Title :
Input noise modeling of deep submicron MOSFETs
Author :
Choudhary, S. ; Qureshi, S.
Author_Institution :
Indian Inst. of Technol., Kanpur
fDate :
Oct. 29 2007-Nov. 1 2007
Abstract :
This paper presents a noise model using the channel length modulation (CLM) effect to calculate the total equivalent noise current, referred to the gate (input) of the MOSFET. It is shown here that for short channel MOSFETs the total input noise depends on the electron warming in the channel, the voltage fluctuations due to the gate polysilicon resistance, and the induced thermal noise at the gate. Taking velocity saturation effect and carrier heating effect in the gradual channel region, complete thermal noise modeling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented.
Keywords :
MOSFET; modulation; semiconductor device noise; thermal noise; carrier heating effect; channel length modulation; deep submicron MOSFET; electron warming; gate polysilicon resistance; induced thermal noise; input noise modeling; velocity saturation effect; voltage fluctuations; CMOS technology; Cutoff frequency; Electrons; Hot carriers; MOSFETs; Microwave Theory and Techniques Society; Microwave technology; Channel length modulation; short channel effects; thermal noise; velocity saturation;
Conference_Titel :
Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International
Conference_Location :
Brazil
Print_ISBN :
978-1-4244-0661-6
Electronic_ISBN :
978-1-4244-0661-6
DOI :
10.1109/IMOC.2007.4404239
