Title :
Annealing effects in TSD-spectra of SiO2 electrets
Author :
Günther, Peter ; Shi, Li-Hua
Author_Institution :
Tech. Univ. of Darmstadt, Germany
Abstract :
Electron-beam or corona charged SiO2 electrets were investigated by measuring open-circuit TSD-currents in the temperature range between 20°C and 500°C. It was found that annealing of the samples before charging shifts or even generates peaks in the TSD-spectrum. Therefore annealing time and temperature dependence were investigated intensively. The results are important for the production of very stable SiO2 electrets and give information about the charge storage mechanism in such electrets
Keywords :
annealing; electrets; silicon compounds; thermally stimulated currents; 20 to 500 degC; SiO2 electrets; TSD-spectra; annealing; annealing time; charge storage mechanism; corona charged SiO2 electrets; electron beam charging; open-circuit TSD-currents; peaks; temperature dependence; Annealing; Corona; Current measurement; Electrets; Electrodes; Production; Silicon; Stability; Temperature dependence; Voltage;
Conference_Titel :
Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
Conference_Location :
Berlin
Print_ISBN :
0-7803-0112-9
DOI :
10.1109/ISE.1991.167291
