• DocumentCode
    2393259
  • Title

    Annealing effects in TSD-spectra of SiO2 electrets

  • Author

    Günther, Peter ; Shi, Li-Hua

  • Author_Institution
    Tech. Univ. of Darmstadt, Germany
  • fYear
    1991
  • fDate
    25-27 Sep 1991
  • Firstpage
    663
  • Lastpage
    668
  • Abstract
    Electron-beam or corona charged SiO2 electrets were investigated by measuring open-circuit TSD-currents in the temperature range between 20°C and 500°C. It was found that annealing of the samples before charging shifts or even generates peaks in the TSD-spectrum. Therefore annealing time and temperature dependence were investigated intensively. The results are important for the production of very stable SiO2 electrets and give information about the charge storage mechanism in such electrets
  • Keywords
    annealing; electrets; silicon compounds; thermally stimulated currents; 20 to 500 degC; SiO2 electrets; TSD-spectra; annealing; annealing time; charge storage mechanism; corona charged SiO2 electrets; electron beam charging; open-circuit TSD-currents; peaks; temperature dependence; Annealing; Corona; Current measurement; Electrets; Electrodes; Production; Silicon; Stability; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
  • Conference_Location
    Berlin
  • Print_ISBN
    0-7803-0112-9
  • Type

    conf

  • DOI
    10.1109/ISE.1991.167291
  • Filename
    167291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2393259