DocumentCode
2393363
Title
Table of Contents [Front Matter]
fYear
2003
fDate
6-7 Nov. 2003
Abstract
Presents the table of contents and front cover of the Extended Abstracts of International Workshop on Gate Insulator.
Keywords
MOSFET; dielectric materials; dielectric thin films; permittivity; MOSFET; adsorption; charge state dependent point defect; dielectric constant; dielectric oxides; dielectric properties; gate insulator; hafnium silicate dielectrics; international workshop; permittivity; physical properties; plasma nitridation; thermal stability; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location
Toyko, Japan
Print_ISBN
4-89114-037-2
Type
conf
DOI
10.1109/IWGI.2003.159170
Filename
1252495
Link To Document