Title :
Table of Contents [Front Matter]
Abstract :
Presents the table of contents and front cover of the Extended Abstracts of International Workshop on Gate Insulator.
Keywords :
MOSFET; dielectric materials; dielectric thin films; permittivity; MOSFET; adsorption; charge state dependent point defect; dielectric constant; dielectric oxides; dielectric properties; gate insulator; hafnium silicate dielectrics; international workshop; permittivity; physical properties; plasma nitridation; thermal stability; thin film;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159170
