Title :
Hf-based high-K dielectrics
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
We report recent results on the effects of high-temperature forming gas and deuterium anneals on performance and reliability characteristics and the effects of AC and DC stress on bias-temperature instability and time-dependent dielectrics breakdown.
Keywords :
MOSFET; annealing; dielectric materials; electric breakdown; hafnium compounds; semiconductor device reliability; AC stress; DC stress; HfO/sub 2/; deuterium annealing; dielectrics; high-temperature forming gas; reliability properties; time-dependent dielectrics breakdown; Annealing; Atherosclerosis; Charge pumps; Deuterium; Hafnium oxide; High-K gate dielectrics; MOSFET circuits; Monitoring; Stress; Temperature;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159171
