DocumentCode :
2393394
Title :
Implementation of high-k gate dielectrics - a status update
Author :
De Gendt, Stefan ; Chen, J. ; Carter, R. ; Cartier, E. ; Caymax, M. ; Claes, M. ; Conard, T. ; Delabie, A. ; Deweerd, W. ; Kaushik, V. ; Kerber ; Kubicek, S. ; Maes, J.W. ; Niwa, M. ; Pantisano, L. ; Puurunen, R. ; Ragnarsson, L. ; Schram, T. ; Shimamoto,
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2003
fDate :
6-7 Nov. 2003
Firstpage :
10
Lastpage :
14
Abstract :
The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.
Keywords :
MOS capacitors; MOSFET; crystallisation; dielectric materials; hafnium compounds; transmission electron microscopy; Hf-Al mixed oxides; HfAlO; MOS capacitors; MOS transistors; TEM; crystallisation; gate dielectrics; Amorphous materials; Annealing; Artificial intelligence; Capacitance measurement; Crystallization; Dielectrics and electrical insulation; Electrodes; High K dielectric materials; High-K gate dielectrics; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
Type :
conf
DOI :
10.1109/IWGI.2003.159172
Filename :
1252497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2393394
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