Title :
Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum
Author :
Tanabe, M. ; Goto, M. ; Uedono, A. ; Yamabe, K.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Japan
Abstract :
Electrical characteristics of underlying thin SiO/sub 2/ films after the Al adsorption and the following removal of it are investigated using MOS capacitors. Al adsorption caused the SiO/sub 2/ thinning and increases of leakage current.
Keywords :
MOS capacitors; adsorption; dielectric materials; dielectric thin films; leakage currents; silicon compounds; Al; Al adsorption; MOS capacitors; SiO/sub 2/; dielectric properties degradation; electrical properties; leakage current; ultrathin SiO/sub 2/ films; Artificial intelligence; Crystallization; Degradation; Dielectric substrates; Dielectric thin films; Electric variables; Leakage current; MOS capacitors; Semiconductor films; Temperature;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159173
