Title :
The influence of silicon nitride cap on NBTI and fermi pinning in HfO2 gate stacks
Author :
Sasaki, Takaoki ; Ootsuka, Fumio ; Hoshi, Takeshi ; Kawahara, Takaaki ; Maeda, Takeshi ; Yasuhira, Mitsuo ; Arikado, Tsunetoshi
Author_Institution :
Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
In this paper, we report the improvements in the interfacial reaction between the gate dielectric and the gate electrode by adding SiN cap layer on HfO/sub 2/. We also report the drastic improvements in the gate leakage, V/sub th/ shift and NBTI.
Keywords :
MOSFET; hafnium compounds; interface states; semiconductor device reliability; silicon compounds; thin films; Fermi pinning; HfO/sub 2/ gate; NBTI; SiN-HfO/sub 2/; gate electrode; gate leakage; interfacial reaction; negative bias; negative bias temperature instability; silicon nitride cap; temperature instability; Electrodes; Gate leakage; Hafnium oxide; High-K gate dielectrics; Hydrogen; Niobium compounds; Nitrogen; Silicon compounds; Stress; Titanium compounds;
Conference_Titel :
Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on
Conference_Location :
Toyko, Japan
Print_ISBN :
4-89114-037-2
DOI :
10.1109/IWGI.2003.159174
